GaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowth

نویسندگان

  • Paul R. Berger
  • N. K. Dutta
  • D. L. Sivco
چکیده

To explore monolithically integrated phototransmitters, a graded-index quantum well laser was integrated with a selectivity regrown heterojunction bipolar transistor (HBT). The laser utilized a p-up configuration, and the HBT used collector down geometry. This scheme allowed the devices to be interconnected through the n +-GaAs substrate. The threshold current (It,,) for the ridge waveguide laser was -70 mA. The HBT exhibited a small signal gain of 26 at a collector current of 30 mA. The modulation index defined as the change in light output per unit change in base current is 1.2 mW/mA for our device.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser

In this paper, we present an analytical model to analysis the kirk effect onstatic and dynamic responses of quantum well heterojunction bipolar transistor lasers(HBTLs). Our analysis is based on solving the kirk current equation, continuityequation and rate equations of HBTL. We compare the performance (current gain,output photon number and small signal modulation bandwi...

متن کامل

Molecular-beam epitaxial growth and characterization of silicon-doped AlGaAs and GaAs on (311)A GaAs substrates and their device applications

The possibility of reliable and reproducible p-type doping of (31 l)A GaAs by Si during molecular-beam epitaxial growth and the application of such doping in the realization of high-performance electronic devices have been investigated. It is seen that p-type doping upto a free hole concentration of 4~ lOI cmB3 can be obtained under conditions of low As, flux and high ()660 “C) growth temperatu...

متن کامل

Monolithic integration of GaAs and h~~~~Ga~.~As lasers by molecular epitaxy on GaAs

Selective area molecular beam epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first timeto monolithically integrate these two lasers emitting near 1.0 and O.&S pm, respectively. During regrowth, GaAs laser stripes were protected under a dielectric mask over which polycrystalline material grew, which was late...

متن کامل

Operation and device applications of a valved-phosphorus cracker in solid-source molecular-beam epitaxy

Solid phosphorus is successfully incorporated into a molecular-beam epitaxy system by a valved-cracker for the growth of phosphorus-based materials. The operating parameters are established through beam flux and reflection high-energy electron diffraction measurements. InP and InGaP lattice matched to GaAs were grown and characterized by Hall measurements, photoluminescence, electroreflectance,...

متن کامل

GaAs-GaAlAs HETEROJUNCTION TRANSISTOR FOR HIGH FREQUENCY OPERATION

A bipolar transistor structure is proposed having application for either high frequency operation or integration with certain types of light emitting devices. The structure involves liquid phase epitaxially grown layers of GaAs for the collector and base regions, and of Ga,_,Al,As for the heterojunction emitter. The high frequency potential of this device results primarily from the high electro...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1999